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WTV3585
N AND P-Channel Enhancement Mode POWER MOSFET
P b Lead(Pb)-Free
6 DRAIN
N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES
1 GATE
Features:
* Low Gate change * Low On-Resistance N-CH RDS(ON)<75m @VGS = 4.5V P-CH RDS(ON)<160m @VGS = -4.5V * SOT-8 Package
3 GATE
5 SOURCE 4 DRAIN
6
5
4
2 SOURCE
1
2
3
TSOP-6
Maximum Ratings (TA=25C Unless Otherwise Specified)
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Maximum Junction-ambient3 Operating Junction Temperature Range Storage Temperature Range TA=25C TA=25C TA=75C Symbol VDS VGS ID IDM PD RJA TJ Tstg Value N-Channl P-Channl 20 12 3.5 2.8 10 1.14 110 +150 -55~+150 -20 12 -2.5 -1.97 -10 A W C/W C C Unit V V A
Device Marking
WTV3585=3585
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WTV3585
N-Channel Electrical Characteristics (TA = 25C Unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF Characteristics
Drain-Source Breakdown Voltage VGS=0,ID=250 A Drain-Source Leakage Current Tj=25C, VDS=20V, VGS=0V Tj=70C, VDS=16V, VGS=0V Gate-Source Leakage current VGS=12V BVDSS IDSS IGSS 20 1 10 100 V A nA
ON Characteristics
Gate-Source Threshold Voltage VDS=VGS, ID=250 A Drain-Source On-Resistance VGS=4.5V,ID=3.5A VGS=2.5V,ID=1.2A Forward Transconductance VDS=5V,ID=3A VGS(Th) RDS(on) gfs 0.5 7 1.2 75 125 V
m S
Dymamic Characteristics
Input Capacitance VGS=0V, VDS=20V, f=1.0MHz Output Capacitance VGS=0V, VDS=20V, f=1.0MHz Reverse Transfer Capacitance VGS=0V, VDS=20V, f=1.0MHz Gate Resistance f=1.0MHz Ciss Coss Crss Rg 230 55 40 1.1 370 1.7 pF
Switching Characteristics
Turn-on Delay Time VDS=15V, VGS=5V, ID=1A, RG=3.3, RD=15 Rise Time VDS=15V, VGS=5V, ID=1A, RG=3.3, RD=15 Turn-off Delay Time VDS=15V, VGS=5V, ID=1A, RG=3.3, RD=15 Fall Time VDS=15V, VGS=5V, ID=1A, RG=3.3, RD=15 Total Gate Charge VDS=16V,VGS=4.5V,I D=3A Gate-Source Charge VDS=16V,VGS=4.5V,I D=3A Gate-Source Change VDS=16V,VGS=4.5V,I D=3A td(on) tr td(off) tf Qg Qgs Qgd 6 8 10 3 4 0.7 2 7 nC ns
Source-Drain Diode Characteristics
Forward On Voltage IS=1.2A, VGS=0V Reverse Recovery Time IS=3A, VGS=0V, dl/dt=100A/s Reverse Recovery Charge IS=3A, VGS=0V, dl/dt=100A/s VSD Trr Qrr 16 8 1.2 V nS nC
Note: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t5sec; 180C/W when mounted on Min. copper pad.
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WTV3585
P-Channel Electrical Characteristics (TA = 25C Unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF Characteristics
Drain-Source Breakdown Voltage VGS=0,ID=-250 A Drain-Source Leakage Current Tj=25C, VDS=-20V, VGS=0V Tj=70C, VDS=-16V, VGS=0V Gate-Source Leakage current VGS=12V BVDSS IDSS IGSS -20 -1 -25 100 V A nA
ON Characteristics
Gate-Source Threshold Voltage VDS=VGS, ID=-250 A Drain-Source On-Resistance2 VGS=-10V, ID=-2.8A VGS=-4.5V, ID=-2.5A VGS=-2.5V, ID=-2A Forward Transconductance VDS=-5V,ID=-2A VGS(Th) RDS(on) 4.0 -1.2 120 160 300 V
m
gfs
S
Dymamic Characteristics
Input Capacitance VGS=0V, VDS=-20V, f=1.0MHz Output Capacitance VGS=0V, VDS=-20V, f=1.0MHz Reverse Transfer Capacitance VGS=0V, VDS=-20V, f=1.0MHz Ciss Coss Crss 270 70 55 430 pF
Switching Characteristics
Turn-on Delay Time VDS=-10V, VGS=-10V, ID=-1A, RG=3.3, RD=10 Rise Time VDS=-10V, VGS=-10V, ID=-1A, RG=3.3, RD=10 Turn-off Delay Time VDS=-10V, VGS=-10V, ID=-1A, RG=3.3, RD=10 Fall Time VDS=-10V, VGS=-10V, ID=-1A, RG=3.3, RD=10 Total Gate Charge2 VDS=-16V, VGS=-4.5V, ID=-2A Gate-Source Charge VDS=-16V, VGS=-4.5V, ID=-2A Gate-Source Change VDS=-16V, VGS=-4.5V, ID=-2A td(on) tr td(off) tf Qg Qgs Qgd 6 17 16 5 5 1 2 ns 8 nC
Source-Drain Diode Characteristics
Forward On Voltage2 IS=-1.2A, VGS=0V Reverse Recovery Time2 IS=-2A, VGS=0V, dl/dt=100A/s Reverse Recovery Charge IS=-2A, VGS=0V, dl/dt=100A/s VSD Trr Qrr 20 15 -1.2 V nS nC
Note: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t5sec; 180C/W when mounted on Min. copper pad.
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WTV3585
Characteristics Curve N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Forward Characteristics of Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
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N-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform Fig 11. Transfer Characteristics
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Characteristics Curve P-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Forward Characteristics of Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
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WTV3585
P-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
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WTV3585
TSOP-6 Outline Dimension
D e1
Unit:mm
TSOP-6
Dim A A1 A2 C D E E1 L L1 b e e1 Min Max
1.10 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 0.45 REF. 0.60 REF. 0 10 0.30 0.50 0.95 REF. 1.90 REF.
E E1
Top View
e Front View A2 A Side View C REF.
b TYP.
A1
0.25
L REF.
L1 REF.
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